Comparative study of SWIR and MWIR Schottky-barrier imagers

Details Comparative study of SWIR and MWIR Schottky-barrier imagers Comparative study of SWIR and MWIR Schottky-barrier imagers

Sep 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685...27r&link_type=abstract

Proc. SPIE Vol. 1685, p. 27-36, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

1

Scientific paper

A 512 pixel truly linear infrared (IR) charge coupled device (CCD) with Schottky barrier sensors and buttable edges has been developed, incorporating three different silicides working in the front-side illumination mode. The main differences between these silicides are the cut- off wavelength and the operating temperature. CoSi(subscript 2) and NiSi show a cut-off wavelength of about 2.8 micrometers allowing an operating temperature of 150 K and passive cooling, whereas PtSi has a cut-off wavelength of about 6 micrometers working at 77 K. All three devices present a good photoresponse uniformity along the sensor row and also a good noise behavior.

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