Physics
Scientific paper
Jun 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1674..552n&link_type=abstract
Proc. SPIE Vol. 1674, p. 552-558, Optical/Laser Microlithography V, John D. Cuthbert; Ed.
Physics
Scientific paper
In this paper we discuss the feasibility of using direct electron-beam lithography in the production of a new type of photomask suitable for photolithography with both the g mercury line and KrF deep UV lasers. The masking effect is produced by the presence of molecular type defects (color centers) which show strong absorption bands in the visible and deep UV. The centers are created in a superficial layer of lithium fluoride (LiF) crystals by direct electron-beam irradiation. A simple mask is presented and the photostability of the centers when submitted to various visible and UV photo-transposition steps is studied. The visible absorption band can withstand approximately 1000 exposures while the UV band can be used approximately 50 times. The use of this material reduces the number of necessary steps in photomask fabrication, eliminating the need for chemical procedures.
Nunes Raul A.
Paciornik Sidnei
Scavarda Do Carmo Luiz C.
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