CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

Details CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

2009-04-03

arxiv.org/abs/0904.0552v1

Nucl.Instrum.Meth.A605:350-352,2009

Physics

Instrumentation and Detectors

5 pages, 2 figures, submitted to Nucl. Instr. and Meth. A

Scientific paper

10.1016/j.nima.2009.03.249

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.

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