CMOS analog-to-digital conversion for uncooled bolometer infrared detector arrays

Details CMOS analog-to-digital conversion for uncooled bolometer infrared detector arrays CMOS analog-to-digital conversion for uncooled bolometer infrared detector arrays

May 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2474...88r&link_type=abstract

Proc. SPIE Vol. 2474, p. 88-97, Smart Focal Plane Arrays and Focal Plane Array Testing, Marc Wigdor; Mark A. Massie; Eds.

Physics

Scientific paper

Bias and signal conditioning techniques for uncooled resistance bolometer infrared detectors employ dc bias or various ac modulation and readout techniques. This paper describes a novel method of converting the absorbed incident radiation into digital signals by use of 0.8 micrometers CMOS oscillators in each pixel. Incoming radiation causes a resistance change in the bolometer which in turn results in a frequency shift. A concept of accurately readout out the digital signals from each pixel in the array is presented. Pixelwise A/D conversion and readout is demonstrated using a thin film semiconductor bolometer detector array. An NETD (Noise Equivalent Temperature Difference) of 0.1 K has been measured.

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