Astronomy and Astrophysics – Astronomy
Scientific paper
Dec 1996
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996apj...473.1114k&link_type=abstract
Astrophysical Journal v.473, p.1114
Astronomy and Astrophysics
Astronomy
7
Atomic Data, Atomic Processes, Molecular Processes
Scientific paper
Charge transfer in Si(3P, 1D) + H+ collisions is studied theoretically by using a semiclassical molecular representation with six molecular channels for the triplet manifold and four channels for the singlet manifold at collision energies above 30 eV, and by using a fully quantum mechanical approach with two molecular channels for both triplet and singlet manifolds below 30 eV. The ab initio potential curves and nonadiabatic coupling matrix elements for the HSi+ system are obtained from multireference single- and double-excitation configuration interaction (MRD-CI) calculations employing a relatively large basis set. The present rate coefficients for charge transfer to Si+(4P) formation resulting from H+ + Si(3P) collisions are found to be large with values from 1 x 10-10 cm-3 s-1 at 1000 K to 1 x 10-8 cm-3 s-1 at 100,000 K. The rate coefficient for Si+(2P) formation, resulting from H+ + Si(3P) collisions, is found to be much smaller because of a larger energy defect from the initial state. These calculated rates are much larger than those reported by Baliunas & Butler, who estimated a value of 10-11 cm-3 s-1 in their coronal plasma study. The present result may be relevant to the description of the silicon ionization equilibrium.
Buenker Robert J.
Gu J. P.
Hirsch G.
Kimura Masahiro
Sannigrahi A. B.
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