Characterization of Titanium films for low temperature detectors

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Superconducting Optical, X-Ray, And Gamma-Ray Detectors

Scientific paper

In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .

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