Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors

Details Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors

Feb 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996nimpa.370...57c&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 370, Issue 1, p. 57-60.

Physics

4

Scientific paper

We are developing normal-insulator-superconductor (NIS) tunnel junctions for use as X-ray detectors for astronomical purposes and as phonon sensors for dark matter detectors. We are using photolithographic techniques to produce structures in which aluminum is the superconductor, Al2O3 is the tunnel barrier, and copper is the normal metal. We describe microfabrication details and present X-ray pulse data.

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