Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications

Details Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications

Apr 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008jemat..37..535r&link_type=ejournal

Journal of Electronic Materials, Volume 37, Issue 4, pp.535-539

Physics

Gst, Electrical Properties, Set/Reset Process, Nucleation

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