Characteristics of 1/f noise of the buried-channel charge-coupled device (CCD).

Details Characteristics of 1/f noise of the buried-channel charge-coupled device (CCD). Characteristics of 1/f noise of the buried-channel charge-coupled device (CCD).

May 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1071...66k&link_type=abstract

Conference on Optical Sensors and Electronic Photography in Conjunction with the Symposium on Optics, Electro-Optics and Laser A

Physics

Optics

Ccd Detectors: Signal-To-Noise Ratio

Scientific paper

Low frequency noise with power spectra of the form 1/fγ has been investigated for an n-buried channel CCD by measuring the drain-to-source noise voltage. The preliminary results indicate that the noise is primarily due to tunneling of electrons at the silicon-silicon dioxide interface to traps located inside the oxide. The traps farther from the interface affect the noise for f < 50 Hz whereas those nearer to the interface influence the noise for f > 50 Hz.

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