Characteristic of vapor dynamic process for sulfur-doped n-type diamond films

Details Characteristic of vapor dynamic process for sulfur-doped n-type diamond films Characteristic of vapor dynamic process for sulfur-doped n-type diamond films

Jan 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5633..434z&link_type=abstract

Advanced Materials and Devices for Sensing and Imaging II. Edited by Wang, Anbo; Zhang, Yimo; Ishii, Yukihiro. Proceedings of

Physics

Scientific paper

Monte Carlo simulations are adopted to study the space distribution of the particles in the mixture of CH4/H2/H2S/Ar considering the avalanche collision and dissociative ionization of electrons based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The relationship between the space distribution and the recombination rate of H and CH3, CH3+ fragment particles is given. The dynamic process of the n-type doped diamond film is simulated under different gas pressure. The particle distributions of S, S+ and Ar+ are also obtained. The result is very important for investigation of n-type diamond film doping at low temperature.

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