Characterisation Studies of Silicon Photomultipliers

Details Characterisation Studies of Silicon Photomultipliers Characterisation Studies of Silicon Photomultipliers

2010-03-31

arxiv.org/abs/1003.6071v2

Physics

Instrumentation and Detectors

11 pages, 21 figures, submitted to Nuclear Instruments and Methods in Physics Research Section A

Scientific paper

10.1016/j.nima.2010.03.169

This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.

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