Characterisation of fully depleted pn-CCD's for X-ray imaging

Details Characterisation of fully depleted pn-CCD's for X-ray imaging Characterisation of fully depleted pn-CCD's for X-ray imaging

Nov 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1159..588s&link_type=abstract

IN: EUV, X-ray, and gamma-ray instrumentation for astronomy and atomic physics; Proceedings of the Meeting, San Diego, CA, Aug.

Physics

Atomic Physics

Charge Coupled Devices, Jfet, P-N Junctions, Radiation Detectors, Volt-Ampere Characteristics, X Ray Imagery, Carrier Density (Solid State), Pixels, Quantum Efficiency, Radiation Hardening

Scientific paper

The characteristicts of fully depletable back-side illuminated pn-CCDs on thick silicon, of the type described by Strueder at al.(1989), are investigated, with special attention given to their temperature dependence and their contribution to the detector noise. Quantum detection efficiencies in the energy range from 100 eV to 10 keV of these structures are calculated using a simple model and are compared to the results obtained with synchrotron radiation. It was found that the calculated values for the dead-layer thickness of 150 nm are within the uncertainty + or - 15 percent of experimental values.

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