Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

Details Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

2012-02-06

arxiv.org/abs/1202.1105v1

Physics

Instrumentation and Detectors

8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section A

Scientific paper

10.1016/j.nima.2012.02.019

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.

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