Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Details Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

2011-03-04

arxiv.org/abs/1103.0881v1

Nuclear Inst. and Methods in Physics Research, A 650 (2011), pp. 55-58

Physics

Instrumentation and Detectors

15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

Scientific paper

10.1016/j.nima.2011.05.081

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

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