Computer Science – Performance
Scientific paper
May 1979
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979ssele..22..507f&link_type=abstract
Solid-State Electronics, vol. 22, May 1979, p. 507-509, 511-515.
Computer Science
Performance
1
Field Effect Transistors, Gallium Arsenides, Metal Surfaces, Schottky Diodes, Volt-Ampere Characteristics, Bias, Design Analysis, Graphs (Charts), Performance Prediction, Saturation
Scientific paper
The maximum channel current (Im), the maximum forward gate bias voltage (Vf), and the corresponding knee voltage (Vkf) play an important role in determining the maximum power-handling capability of a GaAs MESFET. The definition of these parameters is given in a practical manner. Simple yet accurate enough expressions for these parameters derived from a theoretical model are shown in terms of the geometrical and material parameters of the active channel of a device. A very simple expression for Im obtained on an empirical basis is also shown. For the zero-gate-bias channel current (Io) simple theoretical and empirical expressions are presented. Calculated values of Im, Vf, Vkf, and Io using these expressions are in excellent agreement with their measured values for sample devices chosen from a variety of channel properties. A graphical presentation of Im and that of the maximum channel-current enhancement ratio (Im/Io) are given as functions of basic channel parameters for practical purposes.
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