Cesiumoxide-GaAs interface and layer thickness in NEA surface formation

Details Cesiumoxide-GaAs interface and layer thickness in NEA surface formation Cesiumoxide-GaAs interface and layer thickness in NEA surface formation

Jun 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001aipc..570..916m&link_type=abstract

The fourteenth international spin physics symposium, SPIN2000. AIP Conference Proceedings, Volume 570, pp. 916-919 (2001).

Physics

2

Electron Sources, Polarized Beams, Photomultipliers, Phototubes And Photocathodes

Scientific paper

Difference in NEA activation processes on GaAs(100) has been investigated with high resolution photoemission spectroscopy. It was found that the NEA surface produced by different activation processes can be classified into three phases having characteristic chemical reactions of Cs and Oxygen with GaAs. A schematic phase diagram is presented to understand NEA activation processes. .

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