BIB detector development for the far infrared: from Ge to GaAs

Computer Science – Performance

Scientific paper

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Scientific paper

Silicon blocked impurity band (BIB) detectors rapidly became the state-of-the-art for photon detection in the near and mid IR range, improving device performance and increasing array size for satellite-based astronomical telescopes. The multiple advantages of the BIB device, in comparison to conventional extrinsic photoconductors, make them even more desirable for far IR detection, where photoconductors suffer from low absorption coefficients and complex transient behavior. This paper summarizes efforts to develop Ge-based and GaAs-based BIB materials and devices. Key challenges include the growth of the high purity blocking layer and the control of growth interfaces. Numerical modeling is presented that illustrates the effect on electric field profiles and device responsivity for variations in net blocking layer doping and extent of interface gradient.

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