Computer Science – Performance
Scientific paper
Jul 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1447..109r&link_type=abstract
Proc. SPIE Vol. 1447, p. 109-122, Charge-Coupled Devices and Solid State Optical Sensors II, Morley M. Blouke; Ed.
Computer Science
Performance
3
Scientific paper
This paper presents preliminary results on the performance of n-channel, backside-thinned charge-coupled devices (CCDs) as electron-bombarded-semiconductor (EBS) imagers for the detection of 1-10 keV electrons. The devices exhibit average EBS gains ranging from approximately 50 at 1 keV to >1600 at 10 keV. Device radiation tolerance has been investigated by exposing normally-clocked devices to 6 keV electron doses up to 0.01 Coulombs/cm(superscript 2). Room temperature pre- and post-irradiation results are presented for these key device parameters: full well capacity, dark current, and charge transfer efficiency (CTE). At the maximum dose of 0.01 Coulombs/cm(superscript 2), full well capacity decreases 9% from an initial value of 680,000 e(superscript -), and dark current increases from
Ravel Mihir K.
Reinheimer Alice L.
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