Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 um

Details Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 um Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 um

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..173m&link_type=abstract

Proc. SPIE Vol. 4650, p. 173-178, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

3

Scientific paper

We describe Gd doped backside illuminated In(Ga)As double and single heterostructure photodiodes with InAsSbP cladding layers grown onto heavily doped n+-InAs transparent substrate of the episide-down bonding design. The advantages of the construction include improvement of material quality due to rare earth gettering effect and the possibility of coupling with fibers or immersion lenses through the contact free surface. The report presents U-I, spectral response and sensitivity of narrow band (3.1-3.4 micrometers ) photodiodes at 20divided by180 degree(s)C with RoA product as high as 2 (Omega) cm2 at room temperature and serial resistance as low as 0.1 (Omega) .

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