Atomic parameters for doubly-excited heliumlike silicon.

Details Atomic parameters for doubly-excited heliumlike silicon. Atomic parameters for doubly-excited heliumlike silicon.

Jun 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987jqsrt..37..559k&link_type=abstract

Journal of Quantitative Spectroscopy and Radiative Transfer, vol. 37, issue 6, pp. 559-564

Physics

4

Atomic Processes:Silicon

Scientific paper

The authors present theoretical transition rates and transition energies
for states of the excited electron configurations 2lnlarcmin of
heliumlike silicon. The values of n considered range from n = 2 to 4
with allowed values of l and larcmin. Atomic parameters for dielectronic
satellites of hydrogenlike silicon are presented.

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