Atom lithography using MRI-type feature placement

Details Atom lithography using MRI-type feature placement Atom lithography using MRI-type feature placement

2002-09-23

arxiv.org/abs/physics/0209084v1

New J. Phys. 7, 47 (2005)

Physics

Atomic Physics

4 pages, 4 figures

Scientific paper

10.1088/1367-2630/7/1/047

We demonstrate the use of frequency-encoded light masks in neutral atom lithography. We demonstrate that multiple features can be patterned across a monotonic potential gradient. Features as narrow as 0.9 microns are fabricated on silicon substrates with a metastable argon beam. Internal state manipulation with such a mask enables continuously adjustable feature positions and feature densities not limited by the optical wavelength, unlike previous light masks.

Affiliated with

Also associated with

No associations

Rating

Atom lithography using MRI-type feature placement does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Atom lithography using MRI-type feature placement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atom lithography using MRI-type feature placement will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-577175