As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy

Details As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy

2002-02-05

arxiv.org/abs/physics/0202013v1

Physics

Chemical Physics

11 pages, 5 figures

Scientific paper

As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.

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