Annealing study of Cd1-xZnxTe crystals by IR transmission and micro-Raman spectrum

Details Annealing study of Cd1-xZnxTe crystals by IR transmission and micro-Raman spectrum Annealing study of Cd1-xZnxTe crystals by IR transmission and micro-Raman spectrum

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..173w&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

Physics

Scientific paper

The Cd-annealing effects on Cd1-xZnxTe wafers were studied by means of IR transmission and micro-Raman spectrum. The experiments and theoretical analysis demonstrated that the free carrier absorption related to the Cd vacancies resulted in the IR extinction as observed in the transmission spectra. The Raman spectra showed that Raman scattering is a more sensitive method to detect the fine Te precipitates in the Cd1-xZnxTe substrates. The Raman scattering peaks related to the Te precipitates could be found in both the as grown and the annealed samples. The relative intensity of the Te scattering peaks became weaker after Cd-annealing. This result also indicated that it was quite difficult to eliminate the fine Te precipitates entirely through annealing process.

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