Annealing of radiation induced defects in silicon in a simplified phenomenological model

Details Annealing of radiation induced defects in silicon in a simplified phenomenological model Annealing of radiation induced defects in silicon in a simplified phenomenological model

2000-08-16

arxiv.org/abs/physics/0008077v2

Nucl.Instrum.Meth. B183 (2001) 383-390

Physics

Instrumentation and Detectors

14 pages, 5 figures, accepted to Nuclear Instruments and Methods in Physics Research B second version, major revision

Scientific paper

10.1016/S0168-583X(01)00767-4

The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials, that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of the incident particles, for different temperatures; the corresponding stationary solutions are also presented.

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