Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

Details Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

1997-01-29

arxiv.org/abs/hep-ex/9701018v1

Nucl.Instrum.Meth. A395 (1997) 49-53

Physics

High Energy Physics

High Energy Physics - Experiment

13 pages, 6 Postscript figures, uses elsart.cls

Scientific paper

10.1016/S0168-9002(97)00632-3

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.

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