Analysis of trap spectra in LEC and epitaxial GaAs

Details Analysis of trap spectra in LEC and epitaxial GaAs Analysis of trap spectra in LEC and epitaxial GaAs

1999-11-30

arxiv.org/abs/hep-ex/9911048v1

Physics

High Energy Physics

High Energy Physics - Experiment

Invited talk, 6-th Workshop on Gallium Arsenide and Related Compounds June 22-26, 1998 Praha-Pruhonice, Czech Republic

Scientific paper

10.1016/S0168-9002(99)00433-7

Different methods of trap parameter measurement are analysed. Transient
photoconductivity and thermally stimulated effects were used to investigate the
influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The
peculiarities of the TSC were analysed and shown to be related to the influence
of crystal micro-inhomogeneities.

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