Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE

Details Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..672y&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 672-672 (2007).

Physics

Conductivity Phenomena In Semiconductors And Insulators, Chemical Vapor Deposition, Vapor Phase Epitaxy, Growth From Vapor Phase

Scientific paper

We present a study on the n-type ternary InGaN epilayers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type InxGa1-xN (x=0.120 and 0.09) alloys is made for two samples. Structural and electrical properties were characterized by High X-Ray Diffraction and Hall effect respectively.

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