Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits

Details Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits

2010-06-16

arxiv.org/abs/1006.3282v4

Physics

Quantum Physics

14 pages, 9 figures

Scientific paper

We investigate bismuth-doped silicon (Si:Bi) in the "nuclear-electronic" regime where the hyperfine coupling of 1.4754 GHz is comparable to the electron Zeeman term in the spin Hamiltonian. This corresponds to intermediate magnetic fields, $B \approx0.1 - 0.6$ T. There is growing interest in Si:Bi as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of the anomalously-strong hyperfine coupling. In particular, we analyse in detail the regime where recent 4 GHz pulsed magnetic resonance experiments have demonstrated orders of magnitude speed-up in quantum gates involving transitions which are forbidden at high fields. We also present calculations using a phenomenological Markovian master equation which models the decoherence of the electron spin due to Gaussian temporal magnetic field perturbations. The model quantifies the advantages of certain "optimal working points" identified as the $\frac{df}{dB}=0$ regions, which come in the form of frequency minima and maxima. We show that at such regions, dephasing due to the interaction of the electron spin with a fluctuating magnetic field in the $z$ direction (usually adiabatic) is completely removed.

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