All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Details All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

2010-02-17

arxiv.org/abs/1002.3207v1

Appl. Phys. Lett. 96, 101103 (2010)

Physics

Optics

3 pages, 4 figures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.3357427

We demonstrate channel selective 0.1-Gb/s photo-receiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photo-current is enhanced of more than 100,000 due to the ultrahigh-Q (>100,000). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10 nW, the quantum efficiency of this device reaches about 10%.

Affiliated with

Also associated with

No associations

Rating

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-51553