All-optical diode with photonic multilayers based on asymmetric light localization

Details All-optical diode with photonic multilayers based on asymmetric light localization All-optical diode with photonic multilayers based on asymmetric light localization

Mar 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011opten..50c0503j&link_type=abstract

Optical Engineering, Volume 50, Issue 3, pp. 030503-030503-3 (2011).

Physics

Optical Bistability, Optical Multilayers, Photodiodes, Photodiodes, Phototransistors, Photoresistors, Optical Materials, Optical Bistability, Multistability, And Switching, Including Local Field Effects

Scientific paper

An all-optical diode (AOD) with structure (AB)m(BA)n(BBAA)k is proposed based on asymmetric light localization, and its optical bistability are numerically investigated by the nonlinear transfer matrix method. Research results show that the behavior of the AOD strongly depends on the period number m, n, and k, the transmission direction of the AOD is related to the values of m and n, while k affects the transmission contrast of the AOD. It is a significant reference for the design of all-optical signal processing devices.

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