Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon

Details Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon

Oct 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2816....2b&link_type=abstract

Proc. SPIE Vol. 2816, p. 2-13, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, Randolph E. Longshore; Ja

Physics

Scientific paper

The 'isothermal vapor phase epitaxy (iso-VPE) of mercury cadmium telluride on finite cadmium telluride substrate- systems,' consists in the complete transformation of starting CdTe films, on foreign-inert-substrates grown (by MOCVD or MBE), into compositionally controlled and uniform HgCdTe/foreign-substrate structures. The HgTe vapor phase growth and the HgTe/CdTe solid-state interdiffusion are the physical phenomena controlling the iso-VPE process evolution. Working at 530 degrees Celsius, under experimental conditions characterized by HgTe/CdTe interdiffusion rates higher than the HgTe growth rates, the possibility to prepare high quality Hg(subscript 1-x)Cd(subscript x)Te/Sapphire structures has been demonstrated and reported last year. Recently the same process has been successfully experimented on CdTe/Silicon substrates too. For the first time the HgCdTe/Silicon iso-VPE structures characteristics are reported in comparison with the equivalent HgCdTe/Sapphire films. Because of the good solid-state chemical compatibility between Hg(subscript 1-x)Cd(subscript x)Te alloys and silicon, well defined metallurgic interfaces between active layers and silicon substrates have been obtained. Rocking curves with FWHM in the 110 - 130 arcsec range have been measured on 15 micrometer thick HgCdTe/silicon iso-VPE structures. The films as-grown electrical characteristics are p-type, according to a mercury vacancy dominated defectivity.

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