Advanced planar LWIR and VLWIR HgCdTe focal plane arrays

Details Advanced planar LWIR and VLWIR HgCdTe focal plane arrays Advanced planar LWIR and VLWIR HgCdTe focal plane arrays

Jan 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5167..159c&link_type=abstract

Focal Plane Arrays for Space Telescopes. Edited by Grycewicz, Thomas J.; McCreight, Craig R. Proceedings of the SPIE, Volume 51

Physics

Scientific paper

The advanced planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques, has been developed and used to produce longwave and very longwave HgCdTe focal plane arrays in the 320v256 format. The wavelength of these arrays ranges from 10.0-17.0μm. The operability of the longwave HgCdTe arrays is typically over 97%. Without anti-reflection coating and with a 60° FOV cold shield, the D* of the 10.0μm array is 9.4x1010cm x (Hz)1/2 x W-1 at 77K. The 14.7μm and 17.0μm very longwave HgCdTe array diodes have excellent reverse characteristics. The detailed characteristics of these arrays are presented.

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