Activation Mechanism in InGaN Grown by MOVPE

Details Activation Mechanism in InGaN Grown by MOVPE Activation Mechanism in InGaN Grown by MOVPE

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..671y&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 671-671 (2007).

Physics

Conductivity Phenomena In Semiconductors And Insulators, Molecular, Atomic, Ion, And Chemical Beam Epitaxy, Vapor Phase Epitaxy, Growth From Vapor Phase

Scientific paper

Activation mechanism in unintentionally-doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n-type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2 meV.

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