Absorption coefficient of n-type Hg(1-x)Cd(x)Te samples

Details Absorption coefficient of n-type Hg(1-x)Cd(x)Te samples Absorption coefficient of n-type Hg(1-x)Cd(x)Te samples

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..229l&link_type=abstract

IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90

Computer Science

Sound

Absorptivity, Mercury Cadmium Tellurides, N-Type Semiconductors, Bessel Functions, Crystal Structure, Debye Length, Energy Gaps (Solid State), Sound Waves, Wave Scattering

Scientific paper

The effects of exciton absorption and the Burstain-Moss shift on the absorption above the energy gap of n-type direct semiconductors are studied, and a more common expression for absorption is derived. Attention is given to the reasons why exciton absorption peaks have yet to be experimentally observed in HgCdTe. The absorption coefficient of the free carrier in n-type HgCdTe samples has been calculated under the assumption that the four processes of electron transition in the conduction band are mutually independent.

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