The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility

Details The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..236x&link_type=abstract

IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90

Physics

Optics

Electron Mobility, Electron Scattering, Infrared Detectors, Mercury Cadmium Tellurides, N-Type Semiconductors, Photometers, Bessel Functions, Carrier Density (Solid State), Crystal Dislocations, Poisson Equation

Scientific paper

Dislocation scattering is a primary influence on the electronic mobility of the IR optics sensor material, Hg(1-x)Cd(x)Te, and must accordingly be considered alongside ionized impurity scattering, polar-optical scattering, acoustic deformation potential scattering, and piezoelectric scattering. After presenting a modified formula for ionized density in this material, attention is given to the relationship between mobility, temperature, and dislocation density. It is found that the influence of dislocation in the 40-100 K region cannot be neglected.

Affiliated with

Also associated with

No associations

Rating

The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The influence of dislocation scattering on n-type Hg(1-x)Cd(x)Te mobility will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1534957