Physics
Scientific paper
May 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aps..dmp..lp31j&link_type=abstract
American Physical Society, DAMOP Meeting, 27-30 May 1998 Santa Fe, New Mexico, abstract #LP.31
Physics
Scientific paper
We have measured the absolute cross section for electron impact excitation (EIE) of Si^2+(3s3p ^3P^o - 3s3p ^1P) for energies near threshold. A beams modulation technique with inclined electron and ion beams was used. The radiation from the excited ions at λ120.6 nm was detected using an absolutely calibrated optical system that subtends slightly over π steradians. The population of the Si^2+(3s3p ^3P^o) metastable state in the incident ion beam was determined using a beam attenuation method and by making an absolute measurement of the intensity of the λ189.2 nm light from the beam due to radiative decay of the metastable state. A metastable fraction of 22.4 ± 2.5% was measured. Because of the small metastable fraction, the EIE signal is rather small. Nevertheless, the complex resonance structure of the cross section is clearly resolved. Research progress and the experimental apparatus will be described. This work was supported by NASA Supporting Research and Technology Program in Solar Physics grant NAG5-5059 and the Smithsonian Astrophysical Observatory.
Gardner Larry D.
Janzen P. H.
Kohl John L.
Reisenfeld Daniel Brett
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