Absolute Cross Section for Electron Impact Excitation of Ground State Si^2+

Details Absolute Cross Section for Electron Impact Excitation of Ground State Si^2+ Absolute Cross Section for Electron Impact Excitation of Ground State Si^2+

May 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aps..dmp..k608r&link_type=abstract

American Physical Society, DAMOP Meeting, 27-30 May 1998 Santa Fe, New Mexico, abstract #K6.08

Physics

Scientific paper

We have measured the absolute cross section for electron impact excitation (EIE) of Si^2+(3s^2 ^1S - 3s3p ^1P) for energies below threshold to 11 eV above. A beams modulation technique with inclined electron and ion beams was used, where the radiation from the excited ions at λ120.6 nm was detected using an absolutely calibrated optical system. The population of the Si^2+(3s3p ^3P^o) metastable state in the incident ion beam was determined to be 22.4 ± 2.5%. The data have been corrected for contributions to the signal from excitation of the metastable state, and for higher energies, from excitation of the ground state to levels above the 3s3p ^1P level. The experimental 0.5 ± 0.05 eV energy spread allowed us to resolve complex resonance structure throughout the studied energy range. At the reported 15% uncertainty level (90% confidence limit), the measured structure and absolute scale of the cross section are in good agreement with 12-state close-coupling R-matrix calculations(D. C. Griffin et al)., Phys. Rev. A 47, 2871 (1993).^,(P. L. Dufton & A. E. Kingston, MNRAS 241), 209 (1989).. This work was supported by NASA Supporting Research and Technology Program in Solar Physics grants NAGW-1687 and NAG5-5059, NASA Training Grant NGT-51081 and the Smithsonian Astrophysical Observatory.

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