A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes

Details A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes

2004-12-16

arxiv.org/abs/physics/0412099v1

Physics

Instrumentation and Detectors

Scientific paper

10.1063/1.1795358

Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed.

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