A measurement of Lorentz Angle of radiation-hard Pixel Sensors

Details A measurement of Lorentz Angle of radiation-hard Pixel Sensors A measurement of Lorentz Angle of radiation-hard Pixel Sensors

2000-12-20

arxiv.org/abs/physics/0012050v1

Nucl.Instrum.Meth. A465 (2000) 108-111

Physics

Instrumentation and Detectors

6 pages, 5 figures. Presented at Pixel 2000 conference (Genoa, Italy, june 2000). To be published in the Prooceedings of the c

Scientific paper

10.1016/S0168-9002(01)00364-3

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

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