A GaAs/AlAs superlattice as an electrically pumped THz acoustic phonon amplifier

Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Scientific paper

In a semiconductor superlattice (SL), phonon-assisted electron transitions can occur under a quasi-population inversion, brought about by electrical biasing. This paper demonstrates the amplification of an optically excited quasi-monochromatic phonon beam by stimulated emission of phonons. Coherent phonons are generated by ultrafast optical excitation of a generator SL and passed once through a dc biased, GaAs/AlAs gain SL. A 20% increase in the phonon flux is detected when pumping is applied to the gain superlattice, which corresponds to an acoustic gain coefficient of 3600 cm-1. A theoretical model of the phonon amplification is presented that also includes the effects of disorder in the SL. It is found that the amplification process is robust in the presence of disorder and good agreement is obtained with the main features of the experimental observations.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

A GaAs/AlAs superlattice as an electrically pumped THz acoustic phonon amplifier does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with A GaAs/AlAs superlattice as an electrically pumped THz acoustic phonon amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A GaAs/AlAs superlattice as an electrically pumped THz acoustic phonon amplifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-1155312

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.