A finite element analysis of a silicon based double quantum dot structure

Details A finite element analysis of a silicon based double quantum dot structure A finite element analysis of a silicon based double quantum dot structure

2005-12-21

arxiv.org/abs/quant-ph/0512183v4

Phys. Rev. B 73, 233307, (2006)

Physics

Quantum Physics

Scientific paper

10.1103/PhysRevB.73.233307

We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.

Affiliated with

Also associated with

No associations

Rating

A finite element analysis of a silicon based double quantum dot structure does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with A finite element analysis of a silicon based double quantum dot structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A finite element analysis of a silicon based double quantum dot structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-422751