Physics – Optics
Scientific paper
Sep 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685...79s&link_type=abstract
Proc. SPIE Vol. 1685, p. 79-90, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.
Physics
Optics
Scientific paper
The design and performance of a 640 (H) X 480 (V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. The imager achieves an NEDT equals 0.10 K at 30 Hz frame rates with f/1.5 optics (300 K background). The MOS design provides a measured saturation level of 1.5 X 10(superscript 6) electrons (5 V bias) and a noise floor of 300 rms electrons per pixel. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non-interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS 170 operation) resulting in `electronic shutter' variable exposure control. The pixel size of 24 micrometers X 24 micrometers results in a fill factor of 38% for 1.5 micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.
Esposito Benjamin J.
Gilmartin Harvey R.
Hseuh Fu-Lung
Levine Peter A.
Meray Grazyna M.
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