256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band

Details 256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band 256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2552..384k&link_type=abstract

Proc. SPIE Vol. 2552, p. 384-391, Infrared Technology XXI, Bjorn F. Andresen; Marija S. Scholl; Eds.

Physics

Optics

Scientific paper

We developed a 256 by 256 element HgCdTe hybrid infrared focal plane array (IRFPA) for the 8 to 10 micrometer band. We used three technologies to develop this high-performance, long-wavelength, large-scale IRFPA. The first innovation was to glue a sapphire substrate to a thinned Si readout circuit to reduce the thermal expansion mismatch with a HgCdTe diode array fabricated on a CdZnTe substrate. The second was to fabricate an interlaced switched- FET readout circuit using a 3 micrometer CMOS process. This readout circuit has a storage capacity of more than 107 electrons and two video outputs capable of a 3.5 MHz data rate. The third was a HgCdTe diode array with an anodic sulfide passivation film and an optimized cutoff wavelength to reduce dark current and achieve high sensitivity. The noise equivalent temperature difference (NETD) was 0.06 K using f/2.5 optics. After 1000 thermal cycles (300 K - 80 K), there were no significant indium bump failures nor notable degradation in detector performance.

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