2 X 64 GaAs readout for IR FPA application

Details 2 X 64 GaAs readout for IR FPA application 2 X 64 GaAs readout for IR FPA application

Jul 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684..131k&link_type=abstract

In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 131-138.

Computer Science

Field Effect Transistors, Focal Plane Devices, Gallium Arsenides, Infrared Detectors, Readout, Infrared Imagery, Noise Spectra, Thermal Noise

Scientific paper

A high-speed 2 x 64 GaAs readout with direct injection input has been demonstrated. The readout was fabricated in E/D MESFET technology and is intended for hybridization to photovoltaic detector arrays, specifically PV HgCdTe, for use at long wavelength infrared (LWIR) backgrounds (greater than 5 x 10 exp 15 photons/sq cm). System-limited data rate of 50 MHz was achieved at reasonable power dissipation of not greater than 125 mW. Enhancement-mode MESFETs in both implanted and heterostructure E/D MESFET structures were observed to have low 1/f noise and high subthreshold ideality. The noise spectral density of superlattice-buffered heterostructure E-MESFETs operating at drain current of 500 nA (nominal tactical LWIR detector current) was typically about 2 micro-V/Hz exp 1/2 at 1 Hz, which is comparable to silicon NMOS. This is lower than needed for background limited IR photodetector focal plane array sensitivity.

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