Computer Science – Performance
Scientific paper
Jul 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684..139n&link_type=abstract
In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 139-147.
Computer Science
Performance
Cryogenic Temperature, Focal Plane Devices, Heterojunction Devices, Readout, Bipolar Transistors, High Electron Mobility Transistors, Indium Phosphides, Infrared Imagery
Scientific paper
Many IR imaging astronomical and defense applications require focal planes that operate at temperatures less than 20 K. The most widely used readout technology is silicon complementary metal oxide semiconductor (Si CMOS). At ultracold temperatures, however, this technology exhibits undesirable features, such as drain overshoot and kink effects due to frozen out impurities. An InP-based heterostructure device process, under development at Hughes Aircraft Company for high-speed applications, is being assessed for ultracold analog focal plane applications. Benefits should include low power dissipation, low 1/f noise, and radiation hardness. Device performance has been demonstrated at 5 K, comparable with room-temperature performance but with none of the debilitating freezeout effects found in Si CMOS. Focal plane readout circuits based on the InP process are being fabricated.
Hooper William
Nayar P. S.
Nystrom S. C.
Peterson W. R.
Stanchina W. E.
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