Recent progress in the doping of MBE HgCdTe

Details Recent progress in the doping of MBE HgCdTe Recent progress in the doping of MBE HgCdTe

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554...55s&link_type=abstract

Proc. SPIE Vol. 2554, p. 55-68, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan W

Physics

2

Scientific paper

We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 10(superscript 15) cm(superscript -3). Electron mobilities in the range of (2 - 3) X 10(superscript 5) cm(superscript 2)/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 10(superscript 15) cm(superscript -3) doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

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