Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs

Details Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2552..411k&link_type=abstract

Proc. SPIE Vol. 2552, p. 411-420, Infrared Technology XXI, Bjorn F. Andresen; Marija S. Scholl; Eds.

Physics

3

Scientific paper

A hybrid HgCdTe 256 by 256 FPA for LWIR detection was fabricated and an infrared image was demonstrated. MCT epilayers were grown on GaAs substrates by MBE and annealed to p- type. The n+ on p photodiodes were formed by boron ion implantation. The mean value of zero bias differential resistance for the diode array was measured to be 8.0 M(Omega) with a cutoff wavelength of 9.5 micrometer. The effective quantum efficiency was estimated to be 0.55, and the optical cross talk was estimated to be 8.2%. A multiline parallel integration readout circuit designed especially for this 256 by 256 LWIR FPA, had 8.3 X 107 electron capacity, a 190 microsecond integration time, and a single output. This work shows that the MBE growth method on GaAs substrates, pn junction formation process, the MLPI circuit design, and the hybridization technique are useful technologies.

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