Thin-film chemical sensors based on electron tunneling

Details Thin-film chemical sensors based on electron tunneling Thin-film chemical sensors based on electron tunneling

Nov 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985jpl..rept.....k&link_type=abstract

Final Report Jet Propulsion Lab., California Inst. of Tech., Pasadena.

Physics

Chemical Tests, Detection, Electron Tunneling, Mim (Semiconductors), Thin Films, Iodine, Mercury (Metal), Reflectance, Sensitivity, Solid State Devices, Spectroscopy

Scientific paper

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

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