THz semiconductor hot electron bolometer (SHEB)

Details THz semiconductor hot electron bolometer (SHEB) THz semiconductor hot electron bolometer (SHEB)

May 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006spie.6194e..23d&link_type=abstract

Millimeter-Wave and Terahertz Photonics. Edited by Jäger, Dieter; Stöhr, Andreas. Proceedings of the SPIE, Volume 6194, pp. 619

Physics

Scientific paper

Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* ~ (0.3-2)107 cmHz1/2/W in the range of (0.01-1.5) THz.

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