Microwave semiconductor devices

Details Microwave semiconductor devices Microwave semiconductor devices

Mar 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985rpph...48..277s&link_type=abstract

Reports on Progress in Physics (ISSN 0034-4885), vol. 48, March 1985, p. 277-326.

Physics

Microwave Equipment, Semiconductor Devices, Avalanche Diodes, Barritt Diodes, Bipolar Transistors, Carrier Mobility, Crystal Growth, Diodes, Doped Crystals, Fabrication, Field Effect Transistors, Ion Implantation, Negative Resistance Devices, P-I-N Junctions, Packaging, Signal Detectors, Transit Time, Trapatt Devices, Traveling Waves, Tunnel Diodes, Varactor Diodes, Varistors

Scientific paper

The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

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